Publications

Using Film Sense Ellipsometers

In Situ, ALD

In Situ, Liquid Cell

Ex Situ, ALD Films

Ex Situ, Other Films

If you know of other publications that are not on this list, please let us know.

In Situ, ALD

A THREE-STEP ATOMIC LAYER DEPOSITION PROCESS FOR SINX USING SI2CL6, CH3NH2, AND N2 PLASMA

  • Reference: ACS Appl. Mater. Interfaces 2018, 10, 19153−19161 (https://doi.org/10.1021/acsami.8b01392)
  • Authors: Rafaiel A. Ovanesyan, Dennis M. Hausmann, Sumit Agarwal
  • Institutions: Colorado School of Mines and Lam Research Corporation

 

ATOMIC LAYER DEPOSITION OF SICXNY USING SI2CL6 AND CH3NH2 PLASMA

  • Reference: Chem. Mater. 2017, 29, 6269−6278 (https://doi.org/10.1021/acs.chemmater.7b01358)
  • Authors: Rafaiel A. Ovanesyan, Noemi Leick, Kathryn M. Kelchner, Dennis M. Hausmann, Sumit Agarwal
  • Institutions: Colorado School of Mines, Lam Research Corporation

 

SURFACE PHENOMENA DURING PLASMA-ASSISTED ATOMIC LAYER ETCHING OF SIO2

  • Reference: ACS Appl. Mater. Interfaces 2017, 9, 31067−31075 (https://doi.org/10.1021/acsami.7b08234)
  • Authors: Ryan J. Gasvoda, Alex W. van de Steeg, Ranadeep Bhowmick, Eric A. Hudson, Sumit Agarwal
  • Institutions: Colorado School of Mines, Eindhoven University of Technology, Lam Research Corporation

 

ELECTRON-ENHANCED ATOMIC LAYER DEPOSITION OF SILICON THIN FILMS AT ROOM TEMPERATURE

  • Reference: J. Vac. Sci. Technol. A 36(1), Jan/Feb 2018 (https://doi.org/10.1116/1.5006696)
  • Authors: Jaclyn K. Sprenger, Huaxing Sun, Andrew S. Cavanagh, Steven M. George
  • Institution: University of Colorado, Boulder

 

ELECTRON-ENHANCED ATOMIC LAYER DEPOSITION OF BORON NITRIDE THIN FILMS AT ROOM TEMPERATURE AND 100 °C

  • Reference: J. Phys. Chem. C 2018, 122, 9455−9464 (https://doi.org/10.1021/acs.jpcc.8b00796)
  • Authors: Jaclyn K. Sprenger, Huaxing Sun, Andrew S. Cavanagh, Alexana Roshko, Paul T. Blanchard, Steven M. George
  • Institutions: University of Colorado, Boulder, National Institute of Standards and Technology, Boulder, Colorado

 

ELECTRON ENHANCED GROWTH OF CRYSTALLINE GALLIUM NITRIDE THIN FILMS AT ROOM TEMPERATURE AND 100 °C USING SEQUENTIAL SURFACE REACTIONS

  • Reference: Chem. Mater. 2016, 28, 5282−5294 (https://doi.org/10.1021/acs.chemmater.6b00676)
  • Authors: Jaclyn K. Sprenger, Andrew S. Cavanagh, Huaxing Sun, Kathryn J. Wahl, Alexana Roshko, Steven M. George
  • Institutions: University of Colorado, Boulder, Naval Research Laboratory, National Institute of Standards and Technology, Boulder, Colorado

 

TOPOGRAPHICALLY SELECTIVE DEPOSITION

  • Reference: Appl. Phys. Lett. 114, 043101 (2019) (https://doi.org/10.1063/1.5065801)
  • Authors: A. Chaker, C. Vallee, V. Pesce, S. Belahcen, R. Vallat, R. Gassilloud, N. Posseme, M. Bonvalot, A. Bsiesy
  • Institutions: University Grenoble Alpes, CEA, LETI, Minatec Campus

 

TEXTURE AND PHASE VARIATION OF ALD PBTIO3 FILMS CRYSTALLIZED BY RAPID THERMAL ANNEAL

  • Reference: J. Vac. Sci. Technol. A 37(2), Mar/Apr 2019 (https://doi.org/10.1116/1.5080226)
  • Authors: Nicholas A. Strnad, Daniel M. Potrepka, Jeffrey S. Pulskamp, Yang Liu, Jacob L. Jones, Raymond J. Phaneuf, Ronald G. Polcawich
  • Institutions: University of Maryland, General Technical Services, LLC, U.S. Army Research Laboratory, North Carolina State University

 

PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF RUTHENIUM USING RU(ETCP)2 & O2-PLASMA ON PLATINUM

  • Reference: ALD2018 Poster
  • Authors: G. B. Rayner, Jr., B. Johs, B. Liu, N. O’Toole, D. M. Potrepka
  • Institutions: Kurt J. Lesker Company, Film Sense, Pennsylvania State University, U. S. Army Research Laboratory

 

INVESTIGATION OF OXYGEN INCORPORATION DURING TIN PEALD BY IN-SITU ELLIPSOMETRY

  • Reference: UGIM 2018 Poster
  • Authors: Bruce Rayner, Noel O’Toole, Blaine Johs
  • Institutions: Kurt J. Lesker Company, Film Sense

 

INSTALLATION OF AN FS-1 IN SITU ELLIPSOMETER ON AN ATOMIC LAYER DEPOSITION (ALD) SYSTEM. PART 1. HARDWARE CONSIDERATIONS

INSTALLATION OF AN FS-1 IN SITU ELLIPSOMETER ON AN ATOMIC LAYER DEPOSITION (ALD) SYSTEM. PART 2. SOFTWARE CONSIDERATIONS

 

REAL-TIME IN SITU ELLIPSOMETRIC MONITORING OF ALUMINUM NITRIDE FILM GROWTH VIA HOLLOW-CATHODE PLASMA-ASSISTED ATOMIC LAYER DEPOSITION

  • J. Vac. Sci. Technol. A 37(2), Mar/Apr 2019 (https://doi.org/10.1116/1.5085341)
  • Authors: Adnan Mohammad, Deepa Shukla, Saidjafarzoda Ilhom, Brian Willis, Blaine Johs, Ali Kemal Okyay, Necmi Biyikli
  • Institutions: University of Connecticut, Film Sense, Stanford University, Okyay Technologies Inc.

In Situ, Liquid Cell

2D graphene oxide channel for water transport

  • Reference: Faraday Discuss., 2018, 209, 329–340 (https://doi.org/10.1039/c8fd00026c)
  • Authors: Baoxia Mi, Sunxiang Zheng, Qingsong Tu
  • Institution: University of California, Berkeley

 

REGENERABLE POLYELECTROLYTE MEMBRANE FOR ULTIMATE FOULING CONTROL IN FORWARD OSMOSIS

  • Reference: Environ. Sci. Technol. 2017, 51, 3242−3249 (https://doi.org/10.1021/acs.est.6b05665)
  • Authors: Yan Kang, Sunxiang Zheng, Casey Finnerty, Michael J. Lee, Baoxia Mi
  • Institutions: University of Maryland, University of California, Berkeley

 

SWELLING OF GRAPHENE OXIDE MEMBRANES IN AQUEOUS SOLUTION: CHARACTERIZATION OF INTERLAYER SPACING AND INSIGHT INTO WATER TRANSPORT MECHANISMS

  • Reference: ACS Nano 2017, 11, 6440−6450 (https://doi.org/10.1021/acsnano.7b02999)
  • Authors: Sunxiang Zheng, Qingsong Tu, Jeffrey J. Urban, Shaofan Li, Baoxia Mi
  • Institutions: University of California, Berkeley, Lawrence Berkeley National Laboratory

 

UNDERSTANDING THE PH-RESPONSIVE BEHAVIOR OF GRAPHENE OXIDE MEMBRANE IN REMOVING IONS AND ORGANIC MICROPOLLULANTS

  • Reference: Journal of Membrane Science 541 (2017) 235–243 (https://doi.org/10.1016/j.memsci.2017.07.005)
  • Authors: Yoontaek Oh, Dana L. Armstrong, Casey Finnerty, Sunxiang Zheng, Meng Hu, Alba Torrents, Baoxia Mi
  • Institutions: University of Maryland, University of California, Berkeley

Ex Situ, ALD Films

Effect of growth temperature on AlN thin films fabricated by atomic layer deposition

  • Reference: Ceramics International 44 (2018) 17447–17452 (https://doi.org/10.1016/j.ceramint.2018.06.212)
  • Authors: Yong Kim, Min Soo Kim, Hee Ju Yun, Sung Yeon Ryu, Byung Joon Choi
  • Institution: Seoul National University of Science and Technology

 

CHARACTERISTICS OF ATOMIC LAYER DEPOSITED GD2O3 ON N-GAN WITH AN ALN LAYER

  • Reference: RSC Adv., 2018, 8, 42390 (https://doi.org/10.1039/c8ra09708a)
  • Authors: Hogyoung Kim, Hee Ju Yun, Byung Joon Choi
  • Institution: Seoul National University of Science and Technology

 

ALN PASSIVATION EFFECT ON AU/GAN SCHOTTKY CONTACTS

  • Reference: Thin Solid Films 670 (2019) 41–45 (https://doi.org/10.1016/j.tsf.2018.12.008)
  • Authors: Hogyoung Kim, Yurim Kwon, Byung Joon Choi
  • Institution: Seoul National University of Science and Technology

 

THICKNESS DEPENDENCE ON INTERFACIAL AND ELECTRICAL PROPERTIES IN ATOMIC LAYER DEPOSITED ALN ON C-PLANE GAN

  • Reference: Nanoscale Research Letters (2018) 13:232 (https://doi.org/10.1186/s11671-018-2645-8)
  • Authors: Hogyoung Kim, Hee Ju Yoon, Byung Joon Choi
  • Institution: Seoul National University of Science and Technology

 

METALLIC INDIUM SEGREGATION CONTROL OF INN THIN FILMS GROWN ON SI(1 0 0) BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION

  • Reference: Results in Physics 12 (2019) 804–809 (https://doi.org/10.1016/j.rinp.2018.12.023)
  • Authors: Yunlai An, Yingfeng He, Huiyun Wei, Sanjie Liu, Meiling Li, Yimeng Song, Peng Qiu, Abdul Rehman, Xinhe Zheng, Mingzeng Peng
  • Institution: University of Science and Technology Beijing

 

ATOMIC LAYER DEPOSITION OF COBALT(II) OXIDE THIN FILMS FROM CO(BTSA)2(THF) AND H2O

  • Reference: J. Vac. Sci. Technol. A 37(1), Jan/Feb 2019 (https://doi.org/10.1116/1.5066638)
  • Authors: Tomi Iivonen, Mikko Kaipio, Timo Hatanpää, Kenichiro Mizohata, Kristoffer Meinander, Jyrki Räisänen, Jiyeon Kim, Mikko Ritala, Markku Leskelä
  • Institutions: University of Helsinki, Ruhr-University Bochum

 

ATOMIC LAYER DEPOSITION OF MOLYBDENUM AND TUNGSTEN OXIDE THIN FILMS USING HETEROLEPTIC IMIDO-AMIDINATO PRECURSORS: PROCESS DEVELOPMENT, FILM CHARACTERIZATION, AND GAS SENSING PROPERTIES

  • Reference: Chem. Mater. 2018, 30, 8690−8701 (https://doi.org/10.1021/acs.chemmater.8b04129)
  • Authors: Miika Mattinen, Jan-Lucas Wree, Niklas Stegmann, Engin Ciftyurek, Mhamed El Achhab, Peter King, Kenichiro Mizohata, Jyrki Raïsan̈en, Klaus D.Schierbaum, AnjanaDevi, Mikko Ritala, Markku Leskela
  • Institutions: University of Helsinki, Ruhr-University Bochum, University Düsseldorf

 

DIAMINE ADDUCT OF COBALT(II) CHLORIDE AS A PRECURSOR FOR ATOMIC LAYER DEPOSITION OF STOICHIOMETRIC COBALT(II) OXIDE AND REDUCTION THEREOF TO COBALT METAL THIN FILMS

  • Reference: Chem. Mater. 2018, 30, 3499−3507 (https://doi.org/10.1021/acs.chemmater.8b01271)
  • Authors: Katja Vaÿrynen, Timo Hatanpaä, Miika Mattinen, Mikko Heikkila, Kenichiro Mizohata, Kristoffer Meinander, Jyrki Raïsan̈en, Mikko Ritala, Markku Leskela
  • Institution: University of Helsinki

 

ATOMIC LAYER DEPOSITION OF CRYSTALLINE MOLYBDENUM OXIDE THIN FILMS AND PHASE CONTROL BY POST-DEPOSITION ANNEALING

  • Reference: Materials Today Chemistry 9 (2018) 17-27 (https://doi.org/10.1016/j.mtchem.2018.04.005)
  • Authors: Miika Mattinen, Peter J. King, Leonid Khriachtchev, Mikko J. Heikkila, Ben Fleming, Simon Rushworth, Kenichiro Mizohata, Kristoffer Meinander, Jyrki Raisanen, Mikko Ritala, Markku Leskela
  • Institutions: University of Helsinki, EpiValence Ltd

 

LOW-TEMPERATURE WAFER-SCALE DEPOSITION OF CONTINUOUS 2D SNS2 FILMS

  • Reference: Small 2018, 14, 1800547 (https://doi.org/10.1002/smll.201800547)
  • Authors: Miika Mattinen, Peter J. King, Leonid Khriachtchev, Kristoffer Meinander, James T. Gibbon, Vin R. Dhanak, Jyrki Räisänen, Mikko Ritala, Markku Leskelä
  • Institutions: University of Helsinki, University of Liverpool

Ex Situ, Other Films

Measuring thickness in thin NbN films for superconducting devices

  • Reference: submitted (https://doi.org/10.1116/1.5088061)
  • Authors: O Medeiros, M Colangelo, I Charaev, K K Berggren
  • Institutions: Massachusetts Institute of Technology

 

OPTICALLY-MONITORED NANOPORE FABRICATION USING A FOCUSED LASER BEAM

 

LAYER-BY-LAYER ASSEMBLIES OF COORDINATIVE SURFACE-CONFINED ELECTROACTIVE MULTILAYERS: ZIGZAG VS ORTHOGONAL MOLECULAR WIRES WITH LINEAR VS MOLECULAR SPONGE TYPE OF GROWTH

  • Reference: J. Phys. Chem. C 2018, 122, 3419−3427 (https://doi.org/10.1021/acs.jpcc.7b10900)
  • Authors: Jade Poisson, Heather L. Geoffrey, Iraklii I. Ebralidze, Nadia O. Laschuk, Jesse T. S. Allan, Alexandra Deckert, E. Bradley Easton, Olena V. Zenkina
  • Institution: University of Ontario Institute of Technology

 

MEASUREMENT OF FERROELECTRIC FILMS IN MFM AND MFIS STRUCTURES

  • Reference: Thesis, ProQuest Number: 10619120
  • Author: Jackson D. Anderson
  • Institution: Rochester Institute of Technology

 

WORK FUNCTION INVESTIGATIONS OF AL-DOPED ZNO FOR BAND-ALIGNMENT IN ELECTRONIC AND OPTOELECTRONIC APPLICATIONS

  • Reference: Applied Surface Science 484 (2019) 990–998 (https://doi.org/10.1016/j.apsusc.2019.04.079)
  • Authors: Grant Drewelowb, Austin Reedb, Chandon Stoneb, Kwangdong Rohc, Zhong-Tao Jiangd, Linh Nguyen Thi Truce, Kwangsoo Nof, Hongsik Parkg, Sunghwan Lee
  • Institutions: Purdue University, Baylor University, Princeton University, Murdoch University, Ho Chi Minh City University of Education, Korea Advanced Institute of Science and Technology, Kyungpook National University

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